Title :
Copper Phthalocyanine based Organic Photo Field Effect Transistor as a Sensor for Optical Instrumentation
Author :
Karimov, Khasan S. ; Qazi, Ihsan ; Shafique, Umar ; Tahir, MMahroof ; Khan, T.A. ; Haider, S.N.
Author_Institution :
Phys. Tech. Inst. of Acad. of Sci., Dushanbe, Tajikistan
Abstract :
A thin film of organic p-type semiconducting copper phthalocynanine (CuPc) and a semitransparent Al film were deposited by vacuum evaporation on a glass substrate with Ag film source and drain electrodes. Organic field effect transistor with metal (aluminum)-semiconductor (copper phthalocyanine) Schottky type junction was fabricated. Investigations were made for the effect of modulated LED´s irradiation on its characteristics at frequency ranging from 10 Hz-100 kHz. Drain current of organic phototransistor (OPT) was observed to .increase quasi-linearly with illumination. Organic field effect transistor was observed to be sensitive at frequency range from 16 Hz to 316 Hz (AC current) and from 16 Hz to 10 kHz (DC current). A block diagram of optical instrumentation with OPT as a sensor is also proposed.
Keywords :
Schottky gate field effect transistors; optical sensors; organic field effect transistors; organic semiconductors; phototransistors; semiconductor thin films; CuPc thin film; copper phthalocyanine; frequency 16 Hz to 10 kHz; frequency 16 Hz to 316 Hz; glass substrate; metal-semiconductor Schottky type junction; modulated LED irradiation; optical instrumentation; optical sensor; organic p-type semiconductor; organic photo field effect transistor; organic phototransistor; semitransparent aluminum film; thin film; vacuum evaporation; Copper; FETs; Frequency; Instruments; OFETs; Optical films; Optical sensors; Optimized production technology; Semiconductor films; Semiconductor thin films; Copper Phthalocyanine; Metal-Semiconductor Schottky Junction; Organic Field Effect Transistor; Phototransistor;
Conference_Titel :
Signal Processing and Communications, 2007. ICSPC 2007. IEEE International Conference on
Conference_Location :
Dubai
Print_ISBN :
978-1-4244-1235-8
Electronic_ISBN :
978-1-4244-1236-5
DOI :
10.1109/ICSPC.2007.4728452
