DocumentCode :
2044693
Title :
Laser Diodes And Refractory-metal Gate VLSI Gaas MESFETs For Smart Pixels
Author :
Shenoy, Krishna V. ; Fonstad, C.G. ; Elman, B. ; Mikkelson, J.
Author_Institution :
Massachusetts Institute of Technology
fYear :
1992
fDate :
16-19 Nov 1992
Firstpage :
594
Lastpage :
595
Keywords :
Annealing; Diode lasers; Gallium arsenide; MESFETs; Molecular beam epitaxial growth; Optical refraction; Optoelectronic devices; Smart pixels; Temperature; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
LEOS '92, Conference Proceedings. IEEE Lasers and Electro-Optics Society, 1992 Annual Meeting
Print_ISBN :
0-7803-0526-4
Type :
conf
DOI :
10.1109/LEOS.1992.694111
Filename :
694111
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2044693
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