Gated-Field Emission Arrays with Single Carbon Nanotubes Grown on Mo Tips

Author

Ding, Ming Q. ; Shao, Wensheng ; Chen, Changqing ; Li, Xinghui ; Bai, Guodong ; Zhang, Fuquan ; Li, Hanyan ; Jin Jun Feng

Author_Institution

Nat. Lab. for Vacuum Electron., Beijing Vacuum Electron. Res. Inst.

fYear

2006

fDate

38899

Firstpage

431

Lastpage

432

Abstract

In this work, we focus our attention on fabrications and characterizations of micro-gated-field emission arrays with CNTs grown on Mo tips (CNT FEAs). By further optimizing processing parameters, such as thickness of the sacrificial layer and height of Mo tips, the percentage of single CNTs increased to more than 50%. The I-V measurement of an array with 11000 cells at a gate voltage of 92 V showed an anode current of 1.2 mA, corresponding a current density of 0.57 A/cm², with a gate current 3.3% of the anode current

Keywords

anodes; carbon nanotubes; current density; field emitter arrays; 1.2 mA; 92 V; C; I-V measurement; anode current; current density; gate current; gate voltage; microgated-field emission arrays; single carbon nanotubes; Anodes; Apertures; Carbon nanotubes; Cathodes; Current density; Current measurement; Density measurement; Fabrication; Laboratories; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International

Conference_Location

Guilin

Print_ISBN

1-4244-0401-0

Type

conf

DOI

10.1109/IVNC.2006.335252

Filename

4134644