Title :
Investigation of gate voltage oscillations in an IGBT module under short circuit conditions
Author :
Ohi, Takeshi ; Iwata, Akihiko ; Arai, Kiyoshi
Author_Institution :
Adv. Technol. R&D Center, Mitsubishi Electr. Co., Amagasaki, Japan
Abstract :
The gate voltage oscillations in IGBT modules under short circuit conditions were investigated. In IGBT modules containing two chips in parallel, the amplitudes of the gate voltage oscillations were considerably larger than those in modules with single chip configurations. To investigate the gate voltage oscillations, a small signal analysis was performed on parallel circuits containing two IGBT chips. The gate voltage oscillations in parallel chips configurations could be described by a feedback amplifier model. The results of this analysis showed that a high resistive impedance between the gates of the two chips in parallel and a low inductance between their emitters were effective in suppressing the gate voltage oscillations. These effects were confirmed by experiments
Keywords :
bipolar transistor switches; circuit oscillations; insulated gate bipolar transistors; power bipolar transistors; power semiconductor switches; semiconductor device measurement; semiconductor device testing; short-circuit currents; IGBT modules; feedback amplifier model; gate voltage oscillations suppression; inductance; power electronics applications; resistive impedance; short circuit conditions; small signal analysis; Arm; Circuit testing; Feedback amplifiers; Impedance; Inductance; Insulated gate bipolar transistors; Power electronics; Research and development; Signal analysis; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 2002. pesc 02. 2002 IEEE 33rd Annual
Conference_Location :
Cairns, Qld.
Print_ISBN :
0-7803-7262-X
DOI :
10.1109/PSEC.2002.1023065
