Title :
Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure: n-CdCr/sub 2/Se/sub 4//AlGaAs/GaAs
Author :
Jonker, B.T. ; Hanbicki, A.T. ; Kioseoglou, G. ; Li, C.H. ; Stroud, R.M. ; Sullivan, J.M. ; Erwin, S.C. ; Lupke, G. ; Zhao, H.B. ; Ren, Y.H. ; Sun, B. ; Itskos, G. ; Mallory, R. ; Yasar, M. ; Petrou, A.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
March 30 2003-April 3 2003
Abstract :
Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure of CdCr/sub 2/Se/sub 4/-AlGaAs-GaAs are studied. Epitaxially grown CdCr/sub 2/Se/sub 4/ films exhibit hysteresis behavior with significant remanence, an in- plane easy axis with a coercive field of 125 Oe. The cross section of the LED and the band alignment were shown.
Keywords :
III-V semiconductors; aluminium compounds; cadmium compounds; chromium compounds; coercive force; ferromagnetic materials; gallium arsenide; light emitting diodes; magnetic epitaxial layers; magnetic hysteresis; magnetic semiconductors; semiconductor epitaxial layers; spin polarised transport; CdCr/sub 2/Se/sub 4/-AlGaAs-GaAs; LED; band offsets; coercive field; electrical spin injection; epitaxially grown CdCr/sub 2/Se/sub 4/ films; hysteresis; n-type ferromagnetic semiconductor heterostructure n-CdCr/sub 2/Se/sub 4/-AlGaAs-GaAs; Electroluminescence; Gallium arsenide; Light emitting diodes; Polarization; Spin polarized transport;
Conference_Titel :
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7647-1
DOI :
10.1109/INTMAG.2003.1230411
