Title :
Epitaxial growth of the diluted magnetic semiconductors CryGe/sub 1-y/, (Cr,Mn):Ge, and Fe/sub z/Ge/sub 1-x/
Author :
Kioseoglou, G. ; Hanbicki, A.T. ; Li, C.H. ; Goswami, R. ; Spanos, G. ; Erwin, S.C. ; Jonker, B.T.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
March 30 2003-April 3 2003
Abstract :
The molecular beam epitaxial growth of the diluted magnetic semiconductors Cr/sub y/Ge/sub 1-y/, (Cr,Mn):Ge, and Fe/sub z/Ge/sub 1-x/ was reported and the structural, magnetic and transport properties of the samples were described.
Keywords :
Hall effect; chromium compounds; elemental semiconductors; ferromagnetic materials; germanium; iron compounds; magnetic anisotropy; magnetic epitaxial layers; magnetic hysteresis; manganese compounds; molecular beam epitaxial growth; paramagnetic materials; semiconductor epitaxial layers; semiconductor growth; semimagnetic semiconductors; (Cr,Mn):Ge diluted magnetic semiconductors; (CrMn):Ge; 40 to 500 degC; Cr/sub y/Ge/sub 1-y/; Cr/sub y/Ge/sub 1-y/ diluted magnetic semiconductors; Fe/sub z/Ge/sub 1-x/; Fe/sub z/Ge/sub 1-x/ diluted magnetic semiconductors; magnetic properties; molecular beam epitaxial growth; transport properties; Chromium; Epitaxial growth; Flexible manufacturing systems; Impurities; Inorganic materials; Iron; Magnetization; Semiconductor devices; Semiconductor materials; Temperature;
Conference_Titel :
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7647-1
DOI :
10.1109/INTMAG.2003.1230412
