Title :
The Comparison between GaN Thin Film Grown by Femtosecond Pulsed Laser Deposition and Nanosecond Pulsed Laser Deposition
Author :
Tong, X.L. ; Jiang, D.S. ; Liu, Z.M. ; Liu, L.
Author_Institution :
Key Laboratory of Fiber Opt. Sensing Technol. & Information Process., Wuhan Univ. of Technol.
Abstract :
GaN is considered to be an interesting material for field emission cathodes due to its stability. GaN thin films have been grown by femtosecond pulsed laser deposition (PLD) and nanosecond PLD. X-ray diffraction (XRD) and scanning electronic microscope (SEM) were used to characterize the structural properties of the deposited GaN thin films. The results show demonstrated that there were great potential applications of the femtosecond PLD for GaN thin films growth at low temperature
Keywords :
III-V semiconductors; X-ray diffraction; gallium compounds; pulsed laser deposition; scanning electron microscopy; semiconductor thin films; wide band gap semiconductors; GaN; SEM; X-ray diffraction; XRD; femtosecond pulsed laser deposition; field emission cathodes; low temperature thin film growth; nanosecond pulsed laser deposition; scanning electronic microscope; structural properties; Cathodes; Gallium nitride; Optical materials; Optical pulses; Pulsed laser deposition; Scanning electron microscopy; Sputtering; Stability; Ultrafast electronics; X-ray lasers;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location :
Guilin
Print_ISBN :
1-4244-0401-0
DOI :
10.1109/IVNC.2006.335274
