• DocumentCode
    2045718
  • Title

    Cathodoluminescent Properties of SrGa2S4:Eu2+ Phosphor for Field Emission Display Application

  • Author

    Duan, C.Y. ; Chen, Jun ; Deng, S.Z. ; Xu, N.S. ; Liang, H.B. ; Su, Qiang

  • Author_Institution
    State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou
  • fYear
    2006
  • fDate
    38899
  • Firstpage
    483
  • Lastpage
    484
  • Abstract
    Cathodoluminescence (CL) properties of SrGa2S4 :Eu2+ phosphor synthesized by high temperature solid phase reaction have been presented at 0~10 kV and 0~100 muA/cm2 . Photoluminescence (PL), CL and X-ray photoelectron spectroscopy (XPS) spectra were measured for phosphors before and after bombardment with high current densities. PL and CL spectra show that the commercial green phosphor ZnS: Cu, Au, Al after high current densities bombardment has a red shift. PL intensity of SrGa2S4:Eu2+ phosphor decreases after high current densities bombardment but the emission peak wavelength lambdaem does not change. XPS spectra show that the bombarded areas of SrGa2S4:Eu2+ phosphor have chemical reaction after high current densities bombardment. We proposed that the electron beam stimulated surface chemical reaction and thus reduced the brightness of the SrGa2S4:Eu2+ phosphor
  • Keywords
    X-ray photoelectron spectra; brightness; cathodoluminescence; current density; electron-surface impact; europium; gallium compounds; phosphors; photoluminescence; strontium compounds; surface chemistry; SrGa2S4:Eu; SrGa2S4:Eu2+ phosphor; X-ray photoelectron spectroscopy; XPS; brightness; cathodoluminescence; current density; electron beam; field emission display; photoluminescence; surface chemical reaction; Chemicals; Current density; Current measurement; Density measurement; Flat panel displays; Phosphors; Photoluminescence; Solids; Spectroscopy; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
  • Conference_Location
    Guilin
  • Print_ISBN
    1-4244-0401-0
  • Type

    conf

  • DOI
    10.1109/IVNC.2006.335287
  • Filename
    4134670