Study of Application Penetrating Surface Method in SEM to Detect IC with Insulator Layer Si3N4+ SiO2

Author

Hu, Wengue ; Xiao, Ling ; Lin, Yiping ; Liang, Zhuguan ; Li, Yawen ; Li, Ping ; Lan, Dechun ; Wang, Jian ; Zhou, Kailin ; Rau, E.I.

Author_Institution

Phys. & Technol. Coll., Yunnan Univ., Kunming

fYear

2006

fDate

38899

Firstpage

487

Lastpage

488

Abstract

Two novel detectors are developed to detect semiconductor materials and integrated circuits: (1) the electron beam nondestructive microscopic perspective method (detector), the perspective method (detector); (2) the electron beam nondestructive microscopic layered method (detector), the layered method (detector). The novel methods and detectors were applied to scanning electron microscopy (SEM) and a novel instrument is successfully developed, the layered perspective instrument

Keywords

electron beam applications; insulating materials; integrated circuits; scanning electron microscopy; semiconductor materials; sensors; silicon compounds; SEM; Si₃N₄-SiO₂; detector; electron beam nondestructive microscopic layered method; electron beam nondestructive microscopic perspective method; insulator layer; integrated circuits; layered perspective instrument; penetrating surface method; scanning electron microscopy; semiconductor materials; Application specific integrated circuits; Detectors; Insulation; Integrated circuit manufacture; Integrated circuit technology; Microstructure; Physics; Scanning electron microscopy; Semiconductor device manufacture; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International

Conference_Location

Guilin

Print_ISBN

1-4244-0401-0

Type

conf

DOI

10.1109/IVNC.2006.335289

Filename

4134672