Title :
Study on the Internal Damage of Semiconductor Devices and External Damage of Insulator Layers
Author :
Hu, Wenguo ; Lin, Yiping ; Liang, Zhuguan ; Xiao, Ling ; Li, Yawen ; Li, Ping ; Wang, Jian ; Zhou, Kailin ; Rau, E.I.
Author_Institution :
Dept. of Phys., Yunnan Univ., Kunming
Abstract :
The novel electron beam nondestructive microscopic perspective method has been developed and applied to SEM to permeate the SiO2 insulator layer on the surface of the semiconductor material or devices and to permeate the multiple SiO2 insulator layers to visualize the defects and microstructures of the semiconductor devices. The applied perspective method and perspective detector to detect IC, vacuum nanoelectronic devices (VND), MEMS, NEMS and other semiconductor devices showed unexpected significant results
Keywords :
electron beam applications; insulating materials; integrated circuits; micromechanical devices; nanoelectronics; scanning electron microscopy; semiconductor devices; sensors; silicon compounds; vacuum microelectronics; IC; MEMS; NEMS; SEM; SiO2; SiO2 insulator layer; electron beam nondestructive microscopic perspective method; external damage; insulator layers; internal damage; microstructures; perspective detector; semiconductor devices; vacuum nanoelectronic devices; Detectors; Electron beams; Electron microscopy; Insulation; Microstructure; Nanoscale devices; Scanning electron microscopy; Semiconductor devices; Semiconductor materials; Visualization;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location :
Guilin
Print_ISBN :
1-4244-0401-0
DOI :
10.1109/IVNC.2006.335290
