Title :
Enhanced Charge Carriers Injection by Using High-doped Silicon in Organic-inorganic Light-emitting Diodes
Author :
Yang, Shengyi ; Zhang, Xiulong ; Lou, Zhidong ; Teng, Feng ; Xu, Zheng ; Hou, Yanbing
Author_Institution :
Key Lab. of Luminescence & Opt. Inf. Technol., Beijing Jiaotong Univ.
Abstract :
Summary form only given. In this paper, the emission of organic material inserted between two amorphous silicon dioxides (a-SiO2 ) by using high-doped p-type silicon as anode or n-type silicon as cathode has been studied under AC and DC applied voltages. Enhanced charge carrier injection and luminance were observed, which shows high-doped silicon as electrodes can increase the quantity of injected charge carriers. Further, its ability to improve luminance has been studied by changing silicon with different conductance, as well as by varying the thickness of organic and/or inorganic active layers
Keywords :
amorphous state; brightness; charge injection; electroluminescence; elemental semiconductors; organic light emitting diodes; silicon; silicon compounds; AC applied voltage; DC applied voltage; SiO2-Si; amorphous silicon dioxides; anode; cathode; charge carrier injection; conductance; electrodes; emission; high-doped silicon; luminance; n-type silicon; organic-inorganic light-emitting diodes; p-type silicon; thickness; Cathodes; Charge carriers; Excitons; Inorganic materials; Laboratories; Light emitting diodes; Luminescence; Optical polymers; Organic materials; Silicon; Organic-inorganic light-emitting diodes; electroluminescence (EL); high-doped silicon; white light emission;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location :
Guilin
Print_ISBN :
1-4244-0401-0
DOI :
10.1109/IVNC.2006.335291
