Instrumentation Developments in Atom Probe Tomography

Author

Bunton, J.H. ; Lenz, D. ; Olson, J.D. ; Thompson, K. ; Ulfig, R.M. ; Larson, D.J. ; Oltman, E. ; Kelly, T.F.

Author_Institution

Imago Sci. Instrum. Corp., Madison, WI

fYear

2006

fDate

38899

Firstpage

497

Lastpage

498

Abstract

In this paper, recent trends in atom probe instrumentation were described. Also, examples of specific applications were provided. An aluminum field desorption image the demonstrates the wide field-of-view (FOV) capability of the recently developed atom probe detector was presented. The voltage pulsing and laser pulsing modes for metal and semiconductor materials were compared. The combination of pulsed laser atom probe and the expanded FOV facilitate the development of breakthrough applications in semiconductor materials such as dopant profile analysis were also shown

Keywords

atom probe field ion microscopy; desorption; doping profiles; semiconductor materials; aluminum field desorption image; atom probe detector; atom probe tomography; dopant profile analysis; instrumentation; laser pulsing modes; metal; semiconductor materials; voltage pulsing modes; wide field-of-view capability; Aluminum; Atomic beams; Detectors; Instruments; Laser modes; Probes; Semiconductor lasers; Semiconductor materials; Tomography; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International

Conference_Location

Guilin

Print_ISBN

1-4244-0401-0

Type

conf

DOI

10.1109/IVNC.2006.335294

Filename

4134677