Title :
Smoother Shank Profile for Atom Probe Specimens Prepared by the Multi-step Focused Ion Beam Milling
Author :
Pinitsoontorn, S. ; Cerezo, A. ; Petford-Long, A.K.
Author_Institution :
Dept. of Mater., Oxford Univ.
Abstract :
Focused ion beam (FIB) milling has been successfully used to prepare a range of atom probe specimens from metal alloys at site specific locations such as grain boundaries, thin ribbons, powders, and multilayer film materials. Commonly employed, 3-step process generates ledges that act as a stress concentration sites at the shank of the specimens. Smoother shank profile of the specimen is therefore desirable, so as to reduce the chance of specimen failure at such points. In this work, an improved method to fabricate the specimens from planar multilayer thin films was presented. The films were deposited onto etched Si posts, prepared by the lithographic patterning of a Si wafer. Capping layers (e.g. Cu, Ni, and Fe) were deposited on top to protect the films of interest from implantation damage caused by the high energy ion beams. Individual posts were attached to the tip of sharpened metal wires, and subsequently sharpened by ion milling in a FEI FIB 200 instrument without further Pt deposition required
Keywords :
copper; focused ion beam technology; ion implantation; iron; metallic thin films; milling; multilayers; nickel; specimen preparation; Cu; FEI FIB 200 instrument; Fe; Ni; Si; Si wafer; atom probe specimens; capping layers; implantation damage; lithographic patterning; multistep focused ion beam milling; planar multilayer thin films; shank profile; Atomic beams; Grain boundaries; Inorganic materials; Ion beams; Milling; Nonhomogeneous media; Powders; Probes; Stress; Transistors;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location :
Guilin
Print_ISBN :
1-4244-0401-0
DOI :
10.1109/IVNC.2006.335327