Title :
Etching of spin valve capping layers for sensor stabilization applications
Author :
Jayasekara, W.P. ; Zhang, S. ; Mauri, D. ; Nguyen, S. ; Shatz, T. ; Devasahayam, A.J. ; Wang, J.
Author_Institution :
Storage Technol. Div., IBM, San Jose, CA, USA
fDate :
March 30 2003-April 3 2003
Abstract :
In this paper, we discuss ion beam etching (IBE) and reactive ion etching (RIE) of the Tantalum sensor capping layer. Limitations of physical etching are presented. A RIE approach that exhibits excellent selectivity between Ta and NiFe or CoFe is presented. Finally, the fabrication of exchange tabs for GMR sensor stabilization using this method is shown.
Keywords :
cobalt alloys; ferromagnetic materials; giant magnetoresistance; iridium alloys; iron alloys; magnetic sensors; magnetic thin films; manganese alloys; metallic thin films; nickel alloys; spin valves; sputter etching; tantalum; CoFe-NiFe-IrMn-Ta; GMR sensor; IBE; RIE; exchange tabs; ion beam etching; reactive ion etching; sensor stabilization applications; spin valve capping layers; tantalum sensor capping layer; Couplings; Etching; Fabrication; Identity-based encryption; Ion beams; Magnetic heads; Magnetic recording; Magnetic sensors; Milling machines; Spin valves;
Conference_Titel :
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7647-1
DOI :
10.1109/INTMAG.2003.1230446
