GaBi Liquid Metal Alloy Ion Source for the Production of Ions of Interest in Microelectronics Research

Author

Bischoff, L. ; Pilz, W. ; Ganetsos, Th. ; Forbes, R. ; Akhmadaliev, Ch.

Author_Institution

Inst. of Ion Beam Phys., Res. Center Rossendorf Inc., Dresden

fYear

2006

fDate

38899

Firstpage

547

Lastpage

548

Abstract

In this work a Ga₃₈Bi₆₂ alloy liquid metal ion source has been studied, which allows to implant in the case of a silicon substrate shallow donor ions (Bi) as well as acceptors (Ga) in the sub micron range without changing the source. A detailed analysis of the mass spectra as a function of emission current, obtained from this source, was used to investigate the mechanism for the production of single and double-charged ions. Moreover, the intensity of cluster ions extracted by the source, as a function of emission current is represented. Theoretical modeling supports the experimental results

Keywords

bismuth alloys; gallium alloys; ion implantation; liquid metal ion sources; mass spectroscopy; Ga₃₈Bi₆₂; cluster ions; double-charged ions; emission current; liquid metal alloy ion source; mass spectra; microelectronics research; silicon substrate shallow donor ions; single-charged ions; transition metals; Bismuth; Educational technology; Inorganic materials; Ion beams; Ion sources; Iron; Materials science and technology; Microelectronics; Physics; Production;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International

Conference_Location

Guilin

Print_ISBN

1-4244-0401-0

Type

conf

DOI

10.1109/IVNC.2006.335338

Filename

4134702