DocumentCode
2046552
Title
Role of Strain-Compensated Clusters in Al-Alloy Design
Author
Radmilovic, Velimir ; Miller, Michael K. ; Mitlin, David ; Dahmen, Ulrich
Author_Institution
Lawrence Berkeley Lab., California Univ., Berkeley, CA
fYear
2006
fDate
38899
Firstpage
553
Lastpage
554
Abstract
Atom probe tomography has been combined with high resolution transmission electron microscopy (HRTEM) to confirm the existence of such clusters by atomic resolution observation. HRTEM images indicate that the solute clusters are ~3 nm in diameter and contains ~850 atoms. The clusters have diffuse boundaries, maintain the same crystal structure as the host lattice and are roughly spherical in shape. Clusters were face-centered cubic and contained up to 80 at.% Al, whereas the precipitates were diamond cubic and contained no Al. Although the existence of strain-compensated Si-Ge clusters had been postulated previously, this direct observation clarifies their role in the microstructural evolution and provide a more systematic use of this phenomenon
Keywords
Ge-Si alloys; aluminium alloys; crystal structure; precipitation; semiconductor materials; tomography; transmission electron microscopy; Al-alloy design; HRTEM; SiGe; atom probe tomography; crystal structure; diffuse boundaries; face-centered cubic; high resolution transmission electron microscopy; host lattice; microstructural evolution; precipitates; solute clusters; strain-compensated clusters; Aging; Chemical engineering; Chemical technology; Contracts; Cyclotrons; Electron microscopy; Laboratories; Lattices; Materials science and technology; Power engineering and energy;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location
Guilin
Print_ISBN
1-4244-0401-0
Type
conf
DOI
10.1109/IVNC.2006.335341
Filename
4134705
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