DocumentCode :
2047364
Title :
SiProbe-a new technology for wafer probing
Author :
Zimmermann, Karl F.
Author_Institution :
Contact Technol., Newbury Park, CA, USA
fYear :
1995
fDate :
21-25 Oct 1995
Firstpage :
106
Lastpage :
112
Abstract :
This paper will describe a new wafer probing technology that is particularly applicable to the simultaneous probing of multiple die and high pin-count devices that cannot be probed using conventional needle probing cards. Inherent in the design of this product is the capability for high density area array probing at grid densities as high as 50×150 microns and at probe pointing accuracies approaching that of semiconductor feature placement. High-frequency and high-temperature testing are also benefits of this technology
Keywords :
contact resistance; elemental semiconductors; integrated circuit testing; semiconductor technology; silicon; test equipment; 150 mum; 50 mum; CuBe; Si; Si plates; buckling beam; compound wire; contact resistance; grid densities; high pin-count devices; high-frequency testing; high-temperature testing; multiple die; probe pointing accuracies; semiconductor feature placement; simultaneous probing; wafer probing; Assembly; Circuit testing; Etching; Manufacturing processes; Needles; Probes; Silicon; Springs; Temperature distribution; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Test Conference, 1995. Proceedings., International
Conference_Location :
Washington, DC
ISSN :
1089-3539
Print_ISBN :
0-7803-2992-9
Type :
conf
DOI :
10.1109/TEST.1995.529823
Filename :
529823
Link To Document :
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