DocumentCode :
2047534
Title :
A new leakage reduction method for ultra low power VLSI design for portable devices
Author :
Chowdhury, A.J. ; Rizwan, Md S. ; Nibir, S.J. ; Siddique, M. Rifat Alam
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
fYear :
2012
fDate :
17-19 Dec. 2012
Firstpage :
1
Lastpage :
4
Abstract :
Portable electronic devices are integral components in our quotidian life. These devices require charging after a certain amount of usage time. Most of the time during discharging cycle, they remain idle or inactive. If these devices are not in active use, why does the battery discharge? The answer is leakage power consumption. At present the power density in CMOS integrated circuits has increased due to combination of higher clock speeds, greater functional integration, and smaller process geometries. With downward scaling of technology, static power consumption is becoming more dominant. It is challenging for the circuit designers to balance both scaling and low static power demands. In this paper, we propose a new method to reduce static power in the CMOS VLSI circuit using stacked sleep transistor without being penalized in power delay product requirement and circuit performance.
Keywords :
CMOS integrated circuits; VLSI; low-power electronics; CMOS VLSI circuit; CMOS integrated circuit; clock speed; leakage power consumption; leakage reduction method; portable electronic device; power density; stacked sleep transistor; static power consumption; ultra low power VLSI design; Low Power VLSI design; Sleep transistor; Stack effect; State saving technique; Variable body biasing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power, Control and Embedded Systems (ICPCES), 2012 2nd International Conference on
Conference_Location :
Allahabad
Print_ISBN :
978-1-4673-1047-5
Type :
conf
DOI :
10.1109/ICPCES.2012.6508074
Filename :
6508074
Link To Document :
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