Title :
Ballistic current-voltage model in depletion all around operation of the SOI four-gate transistor
Author :
Jahangir, Shafat ; Jahangir, Ifat ; Khosru, Quazi D M ; Hossain, Shahera
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
Abstract :
Two dimensional Poisson-Schrödinger equation is solved numerically in depletion-all-around (DAA) operation of n-channel four-gate transistor (G4-FET) by finite element method using COMSOL with MATLAB. Ballistic drain current is calculated by mode-space approach using modified Tsu-Esaki equation. Effect of multiple gate bias on current-voltage characteristics is observed.
Keywords :
Schrodinger equation; field effect transistors; finite element analysis; silicon-on-insulator; stochastic processes; COMSOL; G4-FET; MATLAB; Poisson-Schrödinger equation; SOI four-gate transistor; ballistic current-voltage model; ballistic drain current; current-voltage characteristics; depletion-all-around operation; finite element method; mode-space approach; modified Tsu-Esaki equation; Four gate transistor (G4FET); ballistic current; depletion all around operation; finite element method; two dimensional Poisson-Schrödinger equation;
Conference_Titel :
TENCON 2010 - 2010 IEEE Region 10 Conference
Conference_Location :
Fukuoka
Print_ISBN :
978-1-4244-6889-8
DOI :
10.1109/TENCON.2010.5686440
