Title :
Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE
Author :
Feng, W. ; Wang, W. ; Pan, J.Q. ; Zhu, H.L. ; Zhao, L.J. ; Zhou, F. ; Wang, L.F. ; Wang, B.J. ; Bian, J. ; An, X.
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing
Abstract :
Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE has been studied. Both the InGaAlAs bulk waveguides and the InGaAlAs MQW waveguides were successful grown on the patterned substrates at optimized growth conditions. The mask stripe width varied from 0 to 40 mum, while the window region width between a pair of mask stripes was fixed 2.5 mum. These selectively grown waveguides were covered by specific InP layers, which can keep the InGaAlAs waveguides from being oxidized during the fabrication of devices. In particular, there exhibit strong dependences of the photoluminescence (PL) spectrum on the mask stripe width for the samples. The results were explained in considering both the migration effect from a masked region (MMR) and the lateral vapor diffusion effect (LVD).
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; photoluminescence; waveguides; InGaAlAs; MQW waveguides; growth mechanism; lateral vapor diffusion effect; mask stripe width; narrow stripe selective MOVPE; photoluminescence spectrum; window region width; Epitaxial growth; Epitaxial layers; Etching; Indium phosphide; Optical device fabrication; Optical surface waves; Optical waveguides; Quantum well devices; Semiconductor waveguides; Substrates;
Conference_Titel :
Biophotonics, Nanophotonics and Metamaterials, 2006. Metamaterials 2006. International Symposium on
Conference_Location :
Hangzhou
Print_ISBN :
0-7803-9773-8
Electronic_ISBN :
0-7803-9774-6
DOI :
10.1109/METAMAT.2006.335062
