Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE

Author

Feng, W. ; Wang, W. ; Pan, J.Q. ; Zhu, H.L. ; Zhao, L.J. ; Zhou, F. ; Wang, L.F. ; Wang, B.J. ; Bian, J. ; An, X.

Author_Institution

Inst. of Semicond., Chinese Acad. of Sci., Beijing

fYear

2006

fDate

16-18 Oct. 2006

Firstpage

288

Lastpage

291

Abstract

Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE has been studied. Both the InGaAlAs bulk waveguides and the InGaAlAs MQW waveguides were successful grown on the patterned substrates at optimized growth conditions. The mask stripe width varied from 0 to 40 mum, while the window region width between a pair of mask stripes was fixed 2.5 mum. These selectively grown waveguides were covered by specific InP layers, which can keep the InGaAlAs waveguides from being oxidized during the fabrication of devices. In particular, there exhibit strong dependences of the photoluminescence (PL) spectrum on the mask stripe width for the samples. The results were explained in considering both the migration effect from a masked region (MMR) and the lateral vapor diffusion effect (LVD).

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; photoluminescence; waveguides; InGaAlAs; MQW waveguides; growth mechanism; lateral vapor diffusion effect; mask stripe width; narrow stripe selective MOVPE; photoluminescence spectrum; window region width; Epitaxial growth; Epitaxial layers; Etching; Indium phosphide; Optical device fabrication; Optical surface waves; Optical waveguides; Quantum well devices; Semiconductor waveguides; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Biophotonics, Nanophotonics and Metamaterials, 2006. Metamaterials 2006. International Symposium on

Conference_Location

Hangzhou

Print_ISBN

0-7803-9773-8

Electronic_ISBN

0-7803-9774-6

Type

conf

DOI

10.1109/METAMAT.2006.335062

Filename

4134801