Title :
Low-temperature photoluminescence of phosphorous-doped ZnO nanowires synthesized by nanoparticle-assisted pulsed-laser deposition
Author :
Sakai, Kentaro ; Okada, Tatsuo ; Fukuyama, Atsuhiko ; Ikari, Tetsuo
Author_Institution :
Cooperative Res. Center, Univ. of Miyazaki, Miyazaki, Japan
Abstract :
Phosphorpus-doped ZnO nanowires were synthesized by our newly developed nanoparticle-assisted pulsed-laser deposition (NAPLD) technique under various growth conditions. This NAPLD technique, which does not require a catalyst for crystal growth, is expected to synthesize high-quality nanostructured ZnO crystals. The luminescence properties were investigated by a photoluminescence (PL) spectroscopy, and the ultraviolet luminescence band (UVL) was observed at low-temperature. This UVL band consists of several sharp emission lines due to free excitonsb (FX), donor-bound excitons, acceptor-bound excitons, donor-acceptor pair (DAP) transitions, and their longitudinal-optical (LO) phonon replicas. We discuss the influence of the growth conditions on the luminescence properties.
Keywords :
II-VI semiconductors; excitons; nanofabrication; nanoparticles; nanowires; phonons; phosphorus; photoluminescence; pulsed laser deposition; semiconductor growth; wide band gap semiconductors; zinc compounds; ZnO:P; acceptor-bound excitons; crystal growth; donor-acceptor pair transitions; donor-bound excitons; high-quality nanostructured crystals; longitudinal-optical phonon replica; low-temperature photoluminescence; nanoparticle-assisted pulsed-laser deposition technique; phosphorous-doped nanowires; photoluminescence spectroscopy; sharp emission lines; ultraviolet luminescence band; Energy dispersive X-ray analyzer; Nanowire; Phosphorous-doped ZnO; Photoluminescence; Pulsed-laser deposition; Scannninng electron microscope;
Conference_Titel :
TENCON 2010 - 2010 IEEE Region 10 Conference
Conference_Location :
Fukuoka
Print_ISBN :
978-1-4244-6889-8
DOI :
10.1109/TENCON.2010.5686459
