DocumentCode
2049032
Title
Linearity improvement of double differential pair CMOS OTA using quasi-floating-gate technique
Author
Narayan, S. ; Bhadauria, Vijaya
Author_Institution
Madhya Pradesh Power Generating Co. Ltd., Sarni, India
fYear
2012
fDate
17-19 Dec. 2012
Firstpage
1
Lastpage
4
Abstract
A new configuration of a linearised operational transconductor amplifier (OTA) using double differential pair with source degeneration block is proposed in this paper. Double differential structure is used to cancel out the even order harmonics. The Source degeneration block of double differential pair is implemented by “Tunable linear Quasi-Floating-Gate (QFG) transistor operating in the triode mode”. Conventional quasi-floating MOS resistors are implemented using a large resistance. This large value of floating biasing resistor is implemented using MOS transistor operating in subthreshold region. The transconductor is implemented using UMC 0.18 μm CMOS technology with 1.8 V supply voltage at room temperature (27°C). The experimental results shows that Second Harmonic Distortion (HD2) of -144.9 dB for 0.5 Vpp at 40KHz and the power consumption is 527.4 μw with 1.8V supply voltage.
Keywords
CMOS analogue integrated circuits; MOSFET; differential amplifiers; harmonic distortion; operational amplifiers; power consumption; power supply circuits; CMOS technology; MOS transistor; QFG transistor; UMC; conventional quasi-floating MOS resistors; double differential pair CMOS OTA; double differential structure; even order harmonics; floating biasing resistor; linearised operational transconductor amplifier; lnearity improvement; power 527.4 muW; power consumption; quasi-floating-gate technique; second harmonic distortion; size 0.18 mum; source degeneration block; subthreshold region; supply voltage; temperature 27 C; triode mode; tunable linear quasi-floating-gate transistor; voltage 1.8 V;
fLanguage
English
Publisher
ieee
Conference_Titel
Power, Control and Embedded Systems (ICPCES), 2012 2nd International Conference on
Conference_Location
Allahabad
Print_ISBN
978-1-4673-1047-5
Type
conf
DOI
10.1109/ICPCES.2012.6508137
Filename
6508137
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