DocumentCode
2049055
Title
Energy barriers in magnetic random access memory elements
Author
Dittrich, R. ; Schrefl, T. ; Forster, H. ; Suess, D. ; Scholz, W. ; Fidler, J.
Author_Institution
Inst. of Solid State Phys., Vienna Univ. of Technol., Austria
fYear
2003
fDate
March 30 2003-April 3 2003
Abstract
In this paper, energy barriers in magnetic random access memory elements were calculated. Three minimum energy paths for the thermal reversal of a thin NiFeCo MRAM element were found between the two stable states.
Keywords
cobalt alloys; ferromagnetic materials; iron alloys; magnetic thin film devices; magnetic thin films; nickel alloys; random-access storage; NiFeCo; energy barriers; magnetic random access memory; thin NiFeCo magnetic random access memory; Energy barrier; Finite element methods; Magnetic switching; Magnetization; Magnetoelasticity; Metastasis; Micromagnetics; Physics; Random access memory; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7647-1
Type
conf
DOI
10.1109/INTMAG.2003.1230563
Filename
1230563
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