DocumentCode
2049101
Title
Pulsed current switching of sub-micron MRAM cell
Author
Bhattacharyya, M.K. ; Tran, L.T. ; Nickel, J.H. ; Anthony, T.C.
Author_Institution
Hewlett-Packard Labs., Palo Alto, CA, USA
fYear
2003
fDate
March 30 2003-April 3 2003
Abstract
In this paper, we will report measurement and simulation of switching of sub-micron MRAM cells and also investigate the effect of temperature on the pulsed current switching of such devices. we will compare detailed micromagnetic simulation of MRAM switching using a stochastic Landau-Lifshitz equation.
Keywords
integrated circuit measurement; integrated circuit modelling; magnetic storage; magnetic switching; magnetoelectronics; micromagnetics; random-access storage; magnetic random access memory switching; micromagnetic simulation; pulsed current switching; stochastic Landau-Lifshitz equation; submicron magnetic random access memory cell; Jitter; Lungs; Magnetic tunneling; Nickel; Nonvolatile memory; Pulse measurements; Random access memory; Space vector pulse width modulation; Stochastic processes; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7647-1
Type
conf
DOI
10.1109/INTMAG.2003.1230565
Filename
1230565
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