Title :
The switching characteristics of sub-micron memory elements with synthetic anti-ferromagnetic (SAF) free-layers
Author :
Janesky, J. ; Rizzo, N.D. ; Engel, B.N. ; Slaughter, J.M. ; Tehrani, S.
Author_Institution :
Motorola Labs., Tempe, AZ, USA
fDate :
March 30 2003-April 3 2003
Abstract :
In this paper, we have studied the switching characteristics of patterned synthetic anti-ferromagnetic (SAF) element for application as a free layer in magnetic random access memory (MRAM).
Keywords :
antiferromagnetic materials; cobalt alloys; exchange interactions (electron); iron alloys; magnetic anisotropy; magnetic switching; magnetic thin films; nickel alloys; random-access storage; synthetic metals; NiFe; NiFeCo; magnetic random access memory; submicron memory elements; switching; synthetic antiferromagnetic free-layers; Antiferromagnetic materials; Nanotechnology;
Conference_Titel :
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7647-1
DOI :
10.1109/INTMAG.2003.1230566
