Title :
Anomalous Temperature-Dependent Bimodal Size Evolution of InAs Quantum Dots on Vicinal GaAs(100) Substrates
Author :
Liang, S. ; Zhu, H.L. ; Zhou, J.T. ; Cheng, Y.B. ; Pan, J.Q. ; Zhao, L.J. ; Wang, W.
Author_Institution :
State Key Lab. on Integrated Optoelectron., Chinese Acad. of Sci., Beijing
Abstract :
Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates grown by metalorganic chemical vapor deposition (MOCVD) is studied. An abnormal trend of the evolution on temperature is observed. With the increase of the growth temperature, while the density of the large dots decreases continually, that of the small dots first grows larger when temperature was below 520degC, and then there is a sudden decrease at 535degC. Photoluminescence (PL) studies show that QDs on vicinal substrates have a narrower PL line width, a longer emission wavelength and a larger PL intensity.
Keywords :
III-V semiconductors; chemical vapour deposition; gallium arsenide; indium compounds; photoluminescence; semiconductor growth; semiconductor materials; semiconductor quantum dots; GaAs; InAs; anomalous temperature-dependent bimodal size; metalorganic chemical vapor deposition; photoluminescence; quantum dots; vicinal substrates; Atomic force microscopy; Chemical vapor deposition; Gallium arsenide; MOCVD; Optical surface waves; Photoluminescence; Quantum dot lasers; Quantum dots; Substrates; Temperature;
Conference_Titel :
Biophotonics, Nanophotonics and Metamaterials, 2006. Metamaterials 2006. International Symposium on
Conference_Location :
Hangzhou
Print_ISBN :
0-7803-9773-8
Electronic_ISBN :
0-7803-9774-6
DOI :
10.1109/METAMAT.2006.335067
