Title :
Thin film growth, electrical transport and ohmic contact studies of p-ZnO
Author :
Kumar, E. Senthil ; Chaterjee, Jyothirmoy ; Singh, Shubra ; DasGupta, Nandita ; Rao, M. S Ramachandra
Author_Institution :
Dept. of Phys., Indian Inst. of Technol. Madras, Chennai, India
Abstract :
We have succeeded in growing a stable and ever eluding p-type (Li, Ni): ZnO using a codoping technique. Pulsed laser deposited (PLD) films grown in a small window of oxygen partial pressures (10-3 - 10-2 mbar) showed room temperature carrier density ~ 2.1 × 10-17 cm-3. Ohmic properties of Ni/Au contact on p-ZnO films were studied using LTLM method. Efforts have also been made to grow different nano forms of ZnO and study their optical properties for various device application prospects.
Keywords :
II-VI semiconductors; carrier density; gold; lithium; nickel; ohmic contacts; pulsed laser deposition; semiconductor doping; semiconductor growth; semiconductor thin films; semiconductor-metal boundaries; wide band gap semiconductors; zinc compounds; Ni-Au-ZnO:Li,Ni; carrier density; codoping; electrical transport; ohmic contact; pulsed laser deposition; thin film; Hall effect and pulsed laser deposition; ZnO; p-type conduction;
Conference_Titel :
TENCON 2010 - 2010 IEEE Region 10 Conference
Conference_Location :
Fukuoka
Print_ISBN :
978-1-4244-6889-8
DOI :
10.1109/TENCON.2010.5686464
