Title :
A novel low power VMRAM/MTJ design with robust magnetic switching
Author :
Xiaochun Zhu ; Jian-Gang Zhu
Author_Institution :
Data Storage Syst. Center, Carnegie Mellon Univ., Pittsburgh, PA, USA
fDate :
March 30 2003-April 3 2003
Abstract :
In this paper, we will present a new MRAM design, targeting ultra-low switching current and switching robustness.
Keywords :
integrated circuit design; integrated circuit modelling; magnetic switching; magnetic tunnelling; micromagnetics; random-access storage; robust magnetic switching; switching robustness; ultralow switching current; vertical magnetic RAM/magnetic tunnel junction design; Magnetic domain walls; Magnetic domains; Magnetic separation; Magnetic switching; Magnetic tunneling; Magnetization; Memory; Micromagnetics; Robust stability; Robustness;
Conference_Titel :
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7647-1
DOI :
10.1109/INTMAG.2003.1230569
