DocumentCode
2049221
Title
Increase of switching field from a word line by design optimization
Author
Kim, K.S. ; Lee, C.E. ; Lim, S.H.
Author_Institution
Dept. of Phys., Korea Univ., Seoul, South Korea
fYear
2003
fDate
March 30 2003-April 3 2003
Abstract
In this work we introducing a soft magnetic keeper layer to a word line and optimizing the shape of the word line.
Keywords
integrated circuit design; integrated circuit modelling; magnetic switching; magnetoelectronics; optimisation; random-access storage; soft magnetic materials; design optimization; optimization; soft magnetic keeper layer; switching field; word line; Art; Current density; Design optimization; Large Hadron Collider; Magnetic switching; Magnetic tunneling; Packaging; Shape; Soft magnetic materials; Tiles;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7647-1
Type
conf
DOI
10.1109/INTMAG.2003.1230571
Filename
1230571
Link To Document