Title :
Enhanced PMOS NBTI degradation due to halo implant channeling
Author :
Brisbin, D. ; Yang, J. ; Bahl, S. ; Parker, C.
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA
fDate :
April 27 2008-May 1 2008
Abstract :
NBTI is a serious reliability concern in state of the art PMOSFET devices. The implementation of nitrided gate oxides to prevent boron penetration has aggravated the NBTI issue. Because of relaxation effects careful stress and measurement techniques (ldquoOn-the-Flyrdquo) must be used for reliable estimation of device lifetime. This abstract describes a unique enhanced NBTI degradation phenomenon in which NBTI induced VT degradation was determine to be directly proportional to the initial VT of the device. Electrical results from special test structures identified halo implant channeling as causing the enhanced NBTI induced degradation behavior.
Keywords :
MOSFET; channelling; ion implantation; life testing; semiconductor device reliability; semiconductor device testing; thermal stability; PMOSFET device reliability; boron penetration; device lifetime; enhanced PMOS NBTI degradation; halo implant channeling; nitrided gate oxide; relaxation effects; Boron; Degradation; Implants; Life estimation; Lifetime estimation; MOSFET circuits; Measurement techniques; Niobium compounds; Stress; Titanium compounds; NBTI; halo implant;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4558864
