Title :
Submicron ferromagnetic logic AND/OR gates
Author :
Faulkner, C.C. ; Allwood, D.A. ; Cooke, M.D. ; Gang Xiong ; Atkinson, D. ; Cowburn, R.P.
Author_Institution :
Dept. of Phys., Durham Univ., UK
fDate :
March 30 2003-April 3 2003
Abstract :
In this paper, submicron ferromagnetic logic AND/OR gates were studied. Ferromagnetic structures suitable for AND/OR gates usage were demonstrated experimentally at room temperature. A metallic continuous Ni/sub 80/Fe/sub 20/ structure was described. SEM micrograph of AND/OR gates was showed.
Keywords :
Permalloy; ferromagnetic materials; logic gates; magnetic hysteresis; magnetic thin film devices; scanning electron microscopy; 293 to 298 K; NiFe; SEM; Si; ferromagnetic structures; metallic continuous Ni/sub 80/Fe/sub 20/ structure; room temperature; submicron ferromagnetic logic AND gates; submicron ferromagnetic logic OR gates; Logic devices; Magnetic films; Magnetic hysteresis; Magnetization; Magnetoelectronics; Nanowires; Semiconductor films; Switches; Temperature; Wire;
Conference_Titel :
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7647-1
DOI :
10.1109/INTMAG.2003.1230573
