DocumentCode
2049269
Title
Submicron ferromagnetic logic AND/OR gates
Author
Faulkner, C.C. ; Allwood, D.A. ; Cooke, M.D. ; Gang Xiong ; Atkinson, D. ; Cowburn, R.P.
Author_Institution
Dept. of Phys., Durham Univ., UK
fYear
2003
fDate
March 30 2003-April 3 2003
Lastpage
11
Abstract
In this paper, submicron ferromagnetic logic AND/OR gates were studied. Ferromagnetic structures suitable for AND/OR gates usage were demonstrated experimentally at room temperature. A metallic continuous Ni/sub 80/Fe/sub 20/ structure was described. SEM micrograph of AND/OR gates was showed.
Keywords
Permalloy; ferromagnetic materials; logic gates; magnetic hysteresis; magnetic thin film devices; scanning electron microscopy; 293 to 298 K; NiFe; SEM; Si; ferromagnetic structures; metallic continuous Ni/sub 80/Fe/sub 20/ structure; room temperature; submicron ferromagnetic logic AND gates; submicron ferromagnetic logic OR gates; Logic devices; Magnetic films; Magnetic hysteresis; Magnetization; Magnetoelectronics; Nanowires; Semiconductor films; Switches; Temperature; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7647-1
Type
conf
DOI
10.1109/INTMAG.2003.1230573
Filename
1230573
Link To Document