DocumentCode
2049368
Title
Reliability and radiation effects in IC technologies
Author
Schrimpf, R.D. ; Warren, K.M. ; Weller, R.A. ; Reed, R.A. ; Massengill, L.W. ; Alles, M.L. ; Fleetwood, D.M. ; Zhou, X.J. ; Tsetseris, L. ; Pantelides, S.T.
Author_Institution
Vanderbilt Univ., Nashville, TN
fYear
2008
fDate
April 27 2008-May 1 2008
Firstpage
97
Lastpage
106
Abstract
The reliability of advanced integrated circuit (IC) technologies may be dominated by the interaction of environmental radiation with the devices in the ICs. In particular, single event upsets (SEUs) and soft errors produced by single energetic particles may have a significant impact on the error rate of digital ICs. Additionally, some of the mechanisms responsible for long-term degradation of ICs under normal operating conditions are related to degradation mechanisms produced by ionizing radiation. This paper reviews issues related to prediction of error rates in ICs and discusses the roles of hydrogen in bias-temperature instability and total-ionizingdose radiation sensitivity.
Keywords
digital integrated circuits; integrated circuit reliability; radiation effects; bias-temperature instability; integrated circuit reliability; ionizing radiation; radiation effects; single energetic particles; single event upsets; soft errors; total-ionizing dose radiation sensitivity; Degradation; Dielectrics and electrical insulation; Error analysis; FETs; Integrated circuit reliability; Integrated circuit technology; Ionizing radiation; MOSFETs; Radiation effects; Single event upset; integrated circuits; interface traps; oxide charge; radiation effects; reliability; single-event effects; total ionizing dose;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location
Phoenix, AZ
Print_ISBN
978-1-4244-2049-0
Electronic_ISBN
978-1-4244-2050-6
Type
conf
DOI
10.1109/RELPHY.2008.4558869
Filename
4558869
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