Title :
Reliability and radiation effects in IC technologies
Author :
Schrimpf, R.D. ; Warren, K.M. ; Weller, R.A. ; Reed, R.A. ; Massengill, L.W. ; Alles, M.L. ; Fleetwood, D.M. ; Zhou, X.J. ; Tsetseris, L. ; Pantelides, S.T.
Author_Institution :
Vanderbilt Univ., Nashville, TN
fDate :
April 27 2008-May 1 2008
Abstract :
The reliability of advanced integrated circuit (IC) technologies may be dominated by the interaction of environmental radiation with the devices in the ICs. In particular, single event upsets (SEUs) and soft errors produced by single energetic particles may have a significant impact on the error rate of digital ICs. Additionally, some of the mechanisms responsible for long-term degradation of ICs under normal operating conditions are related to degradation mechanisms produced by ionizing radiation. This paper reviews issues related to prediction of error rates in ICs and discusses the roles of hydrogen in bias-temperature instability and total-ionizingdose radiation sensitivity.
Keywords :
digital integrated circuits; integrated circuit reliability; radiation effects; bias-temperature instability; integrated circuit reliability; ionizing radiation; radiation effects; single energetic particles; single event upsets; soft errors; total-ionizing dose radiation sensitivity; Degradation; Dielectrics and electrical insulation; Error analysis; FETs; Integrated circuit reliability; Integrated circuit technology; Ionizing radiation; MOSFETs; Radiation effects; Single event upset; integrated circuits; interface traps; oxide charge; radiation effects; reliability; single-event effects; total ionizing dose;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4558869
