Title :
Prediction of early failure due to non-visual defect on time-dependent dielectric breakdown of low-k dielectrics: Experimental verification of a yield-reliability model
Author :
Yokogawa, S. ; Oshida, D. ; Tsuchiya, H. ; Taiji, T. ; Morita, T. ; Tsuchiya, Y. ; Takewaki, T.
Author_Institution :
Adv. Device Dev. Div., NEC Electron. Corp., Sagamihara
fDate :
April 27 2008-May 1 2008
Abstract :
A novel method for the prediction of early failure (EF) due to a non-visual defect is proposed for the time-dependent dielectric breakdown (TDDB) of low-k dielectrics. The yield-reliability relation model is modified to evaluate the EFs. The effectiveness of the novel method is experimentally confirmed by using a 65 nm technology node. A bimodal lifetime distribution is used to evaluate the lifetime distribution. The probability of EF can be estimated based on the basis of the results and the defect density of each wafer.
Keywords :
capacitors; copper; diffusion barriers; electric breakdown; low-k dielectric thin films; silicon compounds; tantalum; tantalum compounds; Cu-SiOCH-SiCN-TaN-Ta; TDDB; bimodal lifetime distribution; defect density; diffusion barriers; early failure; interdigitated comb capacitors; low-k dielectrics; non visual defect; technology node; time-dependent dielectric breakdown; yield-reliability model; Copper; Dielectric breakdown; Dielectric devices; Dielectric materials; Integrated circuit interconnections; Large scale integration; Leakage current; National electric code; Predictive models; Qualifications; Cu interconnect; Poisson distribution; Weibull distribution; early failure; low-k dielectric; negative binominal distribution; non-visual defect; time-dependent dielectric breakdown; yield-reliability relation model;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4558876
