Title :
Comparison of multiple cell upset response of BULK and SOI 130NM technologies in the terrestrial environment
Author :
Gasiot, Gilles ; Roche, Philippe ; Flatresse, Philippe
Author_Institution :
ST Microelectron., Crolles
fDate :
April 27 2008-May 1 2008
Abstract :
This paper presents alpha and neutron experimental results on 130 nm SRAMs processed in SOI and bulk technologies. Experiments were analyzed for multiple cells upset (MCU) occurrence. MCU percentages and rates were recorded as a function of different experimental parameters (supply voltage, test pattern, etc.). This work sheds light on the different mechanisms involved in MCU occurrence between SOI and bulk technologies.
Keywords :
SRAM chips; integrated circuit testing; radiation effects; SRAM cells; multiple cell upset; silicon-on-insulator; size 130 nm; CMOS technology; Concatenated codes; Error correction codes; Interleaved codes; Neutrons; Pattern analysis; Performance evaluation; Random access memory; Testing; Voltage;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4558884
