Title :
Multi-bit upsets in 65nm SOI SRAMs
Author :
Cannon, Ethan H. ; Gordon, Michael S. ; Heidel, David F. ; KleinOsowski, AJ ; Oldiges, Phil ; Rodbell, Kenneth P. ; Tang, Henry H K
Author_Institution :
IBM Syst. & Technol. Group, Essex Junction, VT
fDate :
April 27 2008-May 1 2008
Abstract :
We study multi-bit upsets (MBU) in 65 nm SOI SRAMs. Proton beam and thorium foil experiments demonstrate that SOI SRAMs have lower soft error rate than bulk SRAMs. Monte Carlo SER simulations show that SOI SRAMs have a lower fraction of MBU than bulk SRAMs. The probability of MBU correlates with the spacing of sensitive devices in neighboring cells.
Keywords :
Monte Carlo methods; SRAM chips; error analysis; proton effects; silicon-on-insulator; Monte Carlo simulations; SOI SRAMs; multi-bit upsets; proton beam; sensitive device spacing; soft error rate; thorium foil; Alpha particles; CMOS technology; Circuits; Contacts; Error analysis; Error correction codes; Laboratories; MOSFETs; Particle beams; Random access memory; (SEU); cosmic rays; multi-bit upset; single-event upset; soft error rate (SER);
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4558885
