DocumentCode
2049872
Title
Energy-efficient high-voltage switch based on parallel connection of IGBT and IGCT
Author
Blinov, Andrei ; Vinnikov, Dmitri ; Ivakhno, Volodymyr
Author_Institution
Tallinn Univ. of Technol., Tallinn, Estonia
fYear
2011
fDate
1-3 June 2011
Firstpage
360
Lastpage
364
Abstract
This paper presents an analysis of a hybrid high-voltage switch based on the parallel connection of IGBT and IGCT. The proposed configuration allows combining the advantages of both semiconductors, resulting in substantially reduced power losses. Such energy efficient switches could be used in high-power systems where decreased cooling system requirements are a major concern. The operation principle of the switch is described and simulated and power dissipation is estimated at different operation conditions.
Keywords
energy conservation; high-voltage techniques; insulated gate bipolar transistors; switching convertors; IGBT; IGCT; energy-efficient high-voltage switch; parallel connection; power losses; Clamps; Insulated gate bipolar transistors; Switches; Switching circuits; Switching frequency; Thyristors; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Compatibility and Power Electronics (CPE), 2011 7th International Conference-Workshop
Conference_Location
Tallinn
Print_ISBN
978-1-4244-8806-3
Electronic_ISBN
978-1-4244-8805-6
Type
conf
DOI
10.1109/CPE.2011.5942261
Filename
5942261
Link To Document