DocumentCode :
2049872
Title :
Energy-efficient high-voltage switch based on parallel connection of IGBT and IGCT
Author :
Blinov, Andrei ; Vinnikov, Dmitri ; Ivakhno, Volodymyr
Author_Institution :
Tallinn Univ. of Technol., Tallinn, Estonia
fYear :
2011
fDate :
1-3 June 2011
Firstpage :
360
Lastpage :
364
Abstract :
This paper presents an analysis of a hybrid high-voltage switch based on the parallel connection of IGBT and IGCT. The proposed configuration allows combining the advantages of both semiconductors, resulting in substantially reduced power losses. Such energy efficient switches could be used in high-power systems where decreased cooling system requirements are a major concern. The operation principle of the switch is described and simulated and power dissipation is estimated at different operation conditions.
Keywords :
energy conservation; high-voltage techniques; insulated gate bipolar transistors; switching convertors; IGBT; IGCT; energy-efficient high-voltage switch; parallel connection; power losses; Clamps; Insulated gate bipolar transistors; Switches; Switching circuits; Switching frequency; Thyristors; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compatibility and Power Electronics (CPE), 2011 7th International Conference-Workshop
Conference_Location :
Tallinn
Print_ISBN :
978-1-4244-8806-3
Electronic_ISBN :
978-1-4244-8805-6
Type :
conf
DOI :
10.1109/CPE.2011.5942261
Filename :
5942261
Link To Document :
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