Title :
Simulation of short-circuit phenomena in IGBT
Author :
Alonso, C. ; Meynard, T.A.
Author_Institution :
Lab. d´´Electrotech. et d´´Electron. Ind., CNRS, Toulouse, France
Abstract :
In this paper, we show that our model can represent quite accurately component behaviour in less common situations such as short-circuits. Two kinds of short-circuits may occur in power circuits. The first one is similar to a deficient component which induces a permanent short-circuit situation. The second can be assimilated to a deficiency in firing circuits synchronisation. It induces a time limited short-circuit
Keywords :
insulated gate bipolar transistors; power bipolar transistors; semiconductor device models; short-circuit currents; IGBT; firing circuits synchronisation; model; power circuits; short-circuit; simulation;
Conference_Titel :
Power Semiconductor Devices, IEE Colloquium on
Conference_Location :
London
