DocumentCode :
2049968
Title :
Radiation effects on power semiconductors [nuclear power industry]
Author :
Sharp, R.E.
Author_Institution :
Harwell Lab., AEA Technol., Didcot, UK
fYear :
1994
fDate :
34682
Firstpage :
42552
Lastpage :
42557
Abstract :
This paper describes the effects of gamma radiation on power semiconductor devices as experienced in typical nuclear power industry applications. The environmental conditions under which components and equipment have to operate are reviewed and the influence of these on the type and degree of radiation effects considered. Methods by which to mitigate and accommodate the effects of radiation are also discussed
Keywords :
gamma-ray effects; nuclear power; power MOSFET; semiconductor device testing; thyristors; GTO; environmental conditions; gamma radiation effects; nuclear power industry; power MOSFET; power semiconductor devices; thyristors;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Power Semiconductor Devices, IEE Colloquium on
Conference_Location :
London
Type :
conf
Filename :
472895
Link To Document :
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