• DocumentCode
    2049968
  • Title

    Radiation effects on power semiconductors [nuclear power industry]

  • Author

    Sharp, R.E.

  • Author_Institution
    Harwell Lab., AEA Technol., Didcot, UK
  • fYear
    1994
  • fDate
    34682
  • Firstpage
    42552
  • Lastpage
    42557
  • Abstract
    This paper describes the effects of gamma radiation on power semiconductor devices as experienced in typical nuclear power industry applications. The environmental conditions under which components and equipment have to operate are reviewed and the influence of these on the type and degree of radiation effects considered. Methods by which to mitigate and accommodate the effects of radiation are also discussed
  • Keywords
    gamma-ray effects; nuclear power; power MOSFET; semiconductor device testing; thyristors; GTO; environmental conditions; gamma radiation effects; nuclear power industry; power MOSFET; power semiconductor devices; thyristors;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Power Semiconductor Devices, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • Filename
    472895