• DocumentCode
    2049992
  • Title

    Breakdown and impact ionisation coefficients in (AlxGa 1-x)0.52In0.48P p-i-n junctions

  • Author

    David, J.P.R. ; Ghin, R. ; Hopkinson, M. ; Pate, M.A. ; Robson, P.N.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
  • fYear
    1994
  • fDate
    34682
  • Firstpage
    42522
  • Lastpage
    42526
  • Abstract
    We report here ionisation coefficient measurements across the entire (AlxGa1-x)0.52In0.48P composition range and measurements of Vbd in a series of p-i-n junctions. It is found that this alloy system has significantly lower ionisation coefficients than GaAs or even Al1-xGax As but has a similar electric field dependence. The electron and hole ionisation coefficients are of similar magnitude for all the alloy compositions. The breakdown voltage in this alloy system is one of the largest obtainable with III-V´s and it increases linearly with increasing aluminium composition. This material system may therefore be a suitable replacement for Al1-xGaxAs in power devices
  • Keywords
    III-V semiconductors; aluminium compounds; electric breakdown; gallium compounds; impact ionisation; indium compounds; p-n junctions; (AlxGa1-x)0.52In0.48P; (AlGa)0.52In0.48P; III-V semiconductor; breakdown voltage; electron ionisation coefficients; hole ionisation coefficients; impact ionisation coefficients; p-i-n junctions; power devices;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Power Semiconductor Devices, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • Filename
    472896
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2049992