Title :
Transient behavior of SCRS during ESD pulses
Author :
Esmark, Kai ; Gossner, Harald ; Bychikhin, Sergey ; Pogany, Dionyz ; Russ, Christian ; Langguth, Gernot ; Gornik, Erich
Author_Institution :
Infineon Technol. AG, Munich
fDate :
April 27 2008-May 1 2008
Abstract :
Silicon controlled rectifiers (SCRs) are widely used ESD protection elements exhibiting extremely good voltage clamping and high failure current threshold. However, the turn-on behavior of the SCR is often a matter of concern. A detailed transient study of the 3-D current and temperature distribution in a SCR during a high current square pulse is presented leading to design options with shorter delay between trigger point and full clamp performance.
Keywords :
CMOS integrated circuits; electrostatic discharge; elemental semiconductors; silicon; solid-state rectifiers; 3-D current; ESD pulses; Si; electrostatic discharges; failure current threshold; silicon controlled rectifiers; transient property; trigger point; voltage clamping; Breakdown voltage; CMOS technology; Circuits; Clamps; Electrostatic discharge; Electrostatic interference; Lead compounds; Protection; Threshold voltage; Thyristors; ESD; SCR; TIM - Transient Interferometric Mapping; current filament; transient waveform;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4558894
