A scalable SCR compact model for ESD circuit simulation

Author

Sarro, James Di ; Rosenbaum, Elyse

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL

fYear

2008

fDate

April 27 2008-May 1 2008

Firstpage

254

Lastpage

261

Abstract

A scalable, compact model for SCR-based ESD-protection devices, which can simulate transient voltage overshoots observed on the timescale of charged device model (CDM) events, is presented. This model captures the effect that layout spacings have on SCR characteristics such as holding voltage and trigger current. Bias and time dependencies of SCR on-resistance are captured with a resistance model that accounts for self-heating and velocity saturation.

Keywords

electrostatic discharge; thyristors; transients; ESD circuit simulation; ESD-protection devices; Si; charged device model; layout spacings; resistance model; scalable SCR compact model; self-heating; silicon controlled rectifier; transient voltage overshoots; trigger current; velocity saturation; Circuit simulation; Computational modeling; Discrete event simulation; Electrostatic discharge; P-i-n diodes; Protection; Resistors; Thyristors; Trigger circuits; Voltage control; Electrostatic discharge (ESD); compact modeling; silicon controller rectifier (SCR);

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2008. IRPS 2008. IEEE International

Conference_Location

Phoenix, AZ

Print_ISBN

978-1-4244-2049-0

Electronic_ISBN

978-1-4244-2050-6

Type

conf

DOI

10.1109/RELPHY.2008.4558895

Filename

4558895