Title :
Vertical GaAs MESFET for smart power switching applications
Author :
Wright, N.G. ; Johnson, C.M. ; O´Neill, A.G. ; Hossin, M. ; Gwilliam, R.
Author_Institution :
Dept. of Electr. & Electron. Eng., Newcastle upon Tyne Univ., UK
Abstract :
In this paper, we present a novel GaAs power MESFET designed to take advantage of the high switching speed, low on-state resistance and suitability for high temperature operation of GaAs devices. This vertical geometry device is designed to have a reverse breakdown voltage of at least 800 V and, when fabricated in an interdigitated array of devices, to have a current capacity of at least 10 A. In addition, conventional lateral logic MESFETs, junction-isolated from the conductive substrate, will be incorporated onto the same die for smart power applications
Keywords :
III-V semiconductors; field effect transistor switches; gallium arsenide; power MESFET; power integrated circuits; power semiconductor switches; 10 A; 800 V; GaAs; high temperature operation; interdigitated array; lateral logic MESFETs; on-state resistance; reverse breakdown voltage; smart power switching; vertical GaAs MESFET;
Conference_Titel :
Power Semiconductor Devices, IEE Colloquium on
Conference_Location :
London
