Title :
Study of undoped channel FinFETs in active rail clamp ESD networks
Author :
Khazhinsky, Michael G. ; Chowdhury, Murshed M. ; Tekleab, Daniel ; Mathew, Leo ; Miller, James W.
Author_Institution :
Freescale Semicond. Inc., Austin, TX
fDate :
April 27 2008-May 1 2008
Abstract :
In this paper we investigate state-of-the-art undoped channel FinFETs and FinDiodes with an emphasis on I/O and ESD applicability. Utilizing electrical characterization data, 3D TCAD, and a compact model, we demonstrate that FinFETs and FinDiodes exhibit a very appealing combination of high breakdown voltage and low Ioff for I/O and ESD protection circuit applications.
Keywords :
CMOS integrated circuits; electrostatic discharge; field effect transistor circuits; semiconductor diodes; 3D TCAD; ESD protection circuit applications; active rail clamp ESD networks; breakdown voltage; compact model; electrostatic discharge; findiodes; undoped channel finFETs; Circuits; Clamps; Electrodes; Electrostatic discharge; FinFETs; MOS devices; MOSFETs; Protection; Rails; Tin;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4558896
