Title :
Design of an integrated power MOSFET switch for use up to 13.56 MHz
Author :
Leedham, R.J. ; Carter, D.R.H. ; McMahon, R.A.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
This paper describes the analysis and design of an integrated power MOSFET switch for use at up to 13.56 MHz. The switch combines a high speed MOS-gate driver and a power MOSFET, with ratings of 500 V and Rds(on) of 2.5 Ω. Simulation of the design shows gate rise/fall times of 3 ns and a propagation delay of 11 ns
Keywords :
field effect transistor switches; power MOSFET; power semiconductor switches; 11 ns; 13.56 MHz; 2.5 ohm; 3 ns; 500 V; design; fall times; high speed MOS-gate driver; integrated power MOSFET switch; propagation delay; rise times; simulation;
Conference_Titel :
Power Semiconductor Devices, IEE Colloquium on
Conference_Location :
London
