Title :
Thin-Film Bipolar Transistors on Recrystallized Polycrystalline Silicon Without Impurity Doped Junctions: Proposal and Investigation
Author :
Nadda, Kanika ; Kumar, M.J.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Delhi, New Delhi, India
Abstract :
A lateral polysilicon Bipolar Charge Plasma Transistor (poly-Si BCPT) on undoped recrystallized polycrystalline silicon which is compatible with the thin-film field effect transistor (TFT) fabrication is reported in this paper. Using calibrated two-dimensional device simulation, the electrical performance of the poly-Si BCPT is evaluated in detail by considering the position of the single grain boundary. Our simulation results demonstrate that the poly-Si BCPT has the potential to realize low-cost thin-film polycrystalline silicon bipolar transistors with large current gain and cut-off frequency making it suitable for a number of applications including the driver circuits of the displays.
Keywords :
driver circuits; elemental semiconductors; field effect transistors; grain boundaries; recrystallisation; silicon; thin film transistors; Si; TFT; calibration; cut-off frequency making; driver circuits; electrical performance; impurity doped junctions; large current gain; lateral polysilicon bipolar charge plasma transistor; low-cost thin-film polycrystalline silicon bipolar transistors; poly-Si BCPT; recrystallized polycrystalline silicon; single grain boundary; thin-film bipolar transistors; thin-film field effect transistor; two-dimensional device simulation; Bipolar transistors; Films; Grain boundaries; Integrated circuit modeling; Silicon; Thin film transistors; Bipolar charge plasma transistor (BCPT); bipolar transistor; current gain; glass substrates; poly-Si; simulation; thin-film transistors (TFTs);
Journal_Title :
Display Technology, Journal of
DOI :
10.1109/JDT.2014.2310124
