DocumentCode :
2050111
Title :
Low voltage Transient Voltage Suppressor with v-groove structure
Author :
Dai, Sheng-Huei ; Lin, Chrong-Jung ; King, Ya-Chin
Author_Institution :
Semicond. Technol. Applic. Res. (STAR) Group, Nat. Tsing-Hua Univ., Hsinchu
fYear :
2008
fDate :
April 27 2008-May 1 2008
Firstpage :
278
Lastpage :
282
Abstract :
Transient voltage suppressor (TVS) with v-groove structure is an off-chip device designed for protecting integrated circuits against electrostatic discharge (ESD) and electrical overstress (EOS). Compared with planar diodes, v-groove diodes provide much lower breakdown voltage under the same doping conditions. By selective etching using TMAH, the new TVS can be realized with well controlled v-groove tip angle and simple fabrication process. This new structure can be a low-cost, low breakdown voltage, and low capacitance solution for next generation TVS devices.
Keywords :
electric breakdown; electrostatic discharge; etching; integrated circuit reliability; p-n junctions; semiconductor doping; transient analysis; breakdown voltage; doping conditions; electrical overstress; electrostatic discharge; fabrication process; integrated circuit protection; low voltage transient voltage suppressor; off-chip device; selective etching; v-groove diodes; v-groove structure; voltage 5 V to 450 V; Breakdown voltage; Diodes; Doping; Electrostatic discharge; Etching; Lithography; Low voltage; Protection; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
Type :
conf
DOI :
10.1109/RELPHY.2008.4558898
Filename :
4558898
Link To Document :
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