Charge loss mechanisms and its implications for Programmable Floating Gate Voltage Reference

A simple circuit using a tunnel diode, a storage capacitor and a source follower is proposed as a Programmable Floating Gate Voltage Reference. The charge loss mechanisms through the different devices are studied as function of time both for as fabricated and programmed state. For t <10 ks, charge loss from the Floating Gate is dominated by electron loss in source follower, while for t >10 ks it is dominated by electron gain through the tunnel device. An improved biasing scheme with charge loss < 3 mV in 10 years is proposed.