Conducted emission simulation of an industrial high power current source

Author

Bucke, D. ; Hemp, I. ; Gohler, Lutz ; Bonisch, S.

Author_Institution

Fak. fur Ingenieurwissenschaften und Inf., Hochschule Lausitz, Senftenberg, Germany

fYear

2013

fDate

2-6 Sept. 2013

Firstpage

676

Lastpage

681

Abstract

This paper presents the conducted emission-simulation of an industrial high power current source (HPCS). The simulated circuit topology is based on a pseudo-resonant inverter, which operates in a zero-voltage switching (ZVS) mode. As a trade-off between calculation effort and accuracy an adapted macro model for the IGBT modules has been used. The simulated time domain noise voltage is transferred into the frequency domain by Fast Fourier Transform (FFT). This allows comparing the simulation result with the measurement at a desired operation point.

Keywords

fast Fourier transforms; frequency-domain analysis; network topology; power semiconductor switches; power supplies to apparatus; resonant invertors; time-domain analysis; zero voltage switching; FFT; HPCS; IGBT modules; ZVS; adapted macro model; calculation effort; conducted emission simulation; fast Fourier transform; frequency domain; industrial high power current source; pseudo-resonant inverter; simulated circuit topology; simulated time domain noise voltage; switched power supplies; zero-voltage switching mode; Capacitance; Current measurement; Insulated gate bipolar transistors; Integrated circuit modeling; Noise; Semiconductor diodes; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility (EMC EUROPE), 2013 International Symposium on

Conference_Location

Brugge

ISSN

2325-0356

Type

conf

Filename

6653387