Title :
A comparative study of reliability and performance of strain engineering using CESL stressor and mechanical strain
Author :
Lee, Kyong Taek ; Kang, Chang Yong ; Yoo, Ook Sang ; Chadwin, D. ; Bersuker, Gennadi ; Park, Ho Kyung ; Lee, Jun Myung ; Hwang, Hyung Sang ; Young, Chadwin D. ; Lee, Hi-Deok ; Jeong, Yoon-Ha
Author_Institution :
SEMATECH, Austin, TX
fDate :
April 27 2008-May 1 2008
Abstract :
Effects of a stressor nitride layer on device performance and reliability are investigated. To decouple intrinsic mechanical stress and process-related effects, device characteristics under mechanical bending stress and stressor layers were compared. The compressive stressor device exhibits improved initial interface quality, although slightly degraded reliability characteristics, due to increased hydrogen passivation of the dielectric/substrate interface. Thereby, the hydrogen passivation in the interface is found to be a primary cause of the difference in reliability characteristics.
Keywords :
MOSFET; bending; charge injection; compressive strength; hafnium compounds; high-k dielectric thin films; hot carriers; interface structure; internal stresses; passivation; semiconductor device reliability; titanium compounds; HfON; NMOSFET; PMOSFET; TiN-Si; compressive stressor device; device performance; device reliability; dielectric-substrate interface; hot carrier injection; hydrogen passivation; interfacial defects; intrinsic mechanical stress; mechanical bending stress; nitride contact etch stop layer stressor; positive bias temperature instability; strain engineering; stressor nitride layer; Annealing; Capacitive sensors; Compressive stress; Dielectric substrates; Hydrogen; MOS devices; MOSFETs; Passivation; Reliability engineering; Tensile stress;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4558902
