• DocumentCode
    2050455
  • Title

    A new dielectric degradation phenomenon in nMOS high-k devices under positive bias stress

  • Author

    Heh, Dawei ; Kirsch, Paul D. ; Young, Chadwin D. ; Bersuker, Gennadi

  • Author_Institution
    SEMATECH, Austin, TX
  • fYear
    2008
  • fDate
    April 27 2008-May 1 2008
  • Firstpage
    347
  • Lastpage
    351
  • Abstract
    A new hole trap generation phenomenon during a positive bias stress in nMOS high-k transistors is reported. Fast transient hole trapping at the generated defects is manifested in a negative threshold voltage shift (DeltaVth) observed after the detrapping of electrons. The precursors of these hole traps are thought to be associated with the nitrogen species, which can be incorporated in the interfacial SiO2 layer through gate stack processing.
  • Keywords
    MOSFET; electron traps; high-k dielectric thin films; hole traps; dielectric degradation phenomenon; electron detrapping; gate stack processing; hole trap generation phenomenon; interfacial SiO2 layer; nMOS high-k devices; nitrogen species; positive bias stress; Charge carrier processes; Degradation; Dielectric devices; Electron traps; High K dielectric materials; High-K gate dielectrics; MOS devices; Nitrogen; Stress; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
  • Conference_Location
    Phoenix, AZ
  • Print_ISBN
    978-1-4244-2049-0
  • Electronic_ISBN
    978-1-4244-2050-6
  • Type

    conf

  • DOI
    10.1109/RELPHY.2008.4558910
  • Filename
    4558910
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2050455